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eBook Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics) download
Engineering
Author: Viktor Sverdlov
ISBN: 3709103819
Subcategory: Engineering
Pages 252 pages
Publisher Springer; 2011 edition (March 10, 2011)
Language English
Category: Engineering
Rating: 4.6
Votes: 152
ePUB size: 1533 kb
FB2 size: 1115 kb
DJVU size: 1570 kb
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eBook Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics) download

by Viktor Sverdlov


The book covers all relevant modeling approaches used to describe strain in silicon has been added to your Cart.

The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical . and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given has been added to your Cart.

Computational Microelectronics. Strain-Induced Effects in Advanced MOSFETs. Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. Authors: Sverdlov, Viktor. Offers a comprehensive overview of strain techniques. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.

series Computational Microelectronics.

Автор: Viktor Sverdlov Название: Strain-Induced Effects in Advanced MOSFETs Издательство: Springer .

Автор: Viktor Sverdlov Название: Strain-Induced Effects in Advanced MOSFETs Издательство: Springer Классификация: Электронная техника ISBN: 3709119332 ISBN-13(EAN): 9783709119334 ISBN: 3-7091-1933-2 ISBN-13(EAN): 978-3-7091-1933-4 Вес: . 59 кг. Дата издания: 2. 8. Описание: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based uctor field-effect transistors (MOSFETs).

Effects in Advanced MOSFETs - Computational Microelectronics (Paperback). Strain is used to boost performance of MOSFETs

Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics (Paperback). Viktor Sverdlov (author).

Strain is used to boost performance of MOSFETs.

Items related to Strain-Induced Effects in Advanced MOSFETs (Computational. Modeling of strain effects on transport is an important task of modern simulation tools required for device design

Items related to Strain-Induced Effects in Advanced MOSFETs (Computational. Sverdlov, Viktor Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics). ISBN 13: 9783709103814.

Viktor Sverdlov Strain-Induced Effects in Advanced MOSFETs. Folkscanomy Science: Books of a Scientific Nature. ark:/13960/t45q6k39p. Folkscanomy: A Library of Books. Additional Collections.

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oceedings{Bir1974SymmetryAS, title {Symmetry and strain-induced effects in semiconductors}, author {G. L. Bir and Grigoriĭ Ezekielevich Pikus}, year {1974} }. G. Bir, Grigoriĭ Ezekielevich Pikus. A toy cycle in which the front wheel assembly is pivotably connected to the vehicle body for steering the vehicle and the pair of wheels carried by the front wheel assembly are mounted on a drive shaft journalled in the assembly, one wheel being drivable thereby. A pair of driving pedals are mounted on the drive shaft for driving the drive shaft to drive the drive wheel forwardly.

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.